Rapid thermal annealing (R TA) techniques are increasingly used in many technological applications. To date, however, only a limited knowledge exists of the eﬁfects induced by these thermal treatments on the material characteristics. We have studied the defect equilibria in ﬂoat zone (FZ) and Czochralski zone (CZ) silicon subjected to annealing at 400 C by employing two diﬂ’erent heating techniques, namely electron beam and lamp system.
1 Jan 2014
Volume: 4 Pages: 231-235
Science and Technology of Defects in Silicon