Interfacing ferromagnetic materials with topological insulators is an intriguing strategy in order to enhance spin-to-charge conversion mechanisms, paving the way toward highly efficient spin-based electronic devices. In particular, the use of large-scale deposition techniques is demanding for a sustainable and cost-effective industrial technology transfer. In this work, we study the magnetic properties of the Co/Sb 2 Te 3 heterostructure, where the ferromagnetic Co layer is deposited by atomic layer deposition on top of the Sb 2 Te 3 topological insulator, which is grown by metal organic chemical vapor deposition. In particular, broadband ferromagnetic resonance is employed to characterize the Co/Sb 2 Te 3 system and the reference Co/Pt heterostructure. For Co/Sb 2 Te 3, we extract an effective magnetic anisotropy constant K e f f= 4.26∙ 10 6 erg cm 3, which is an order of magnitude higher than in Co/Pt K eff= 0.43∙ …