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Interfacing ferromagnetic materials with topological insulators is an intriguing strategy in order to enhance spin-to-charge conversion mechanisms, paving the way toward highly efficient spin-based electronic devices. In particular, the use of large-scale deposition techniques is demanding for a sustainable and cost-effective industrial technology transfer. In this work, we study the magnetic properties of the Co/Sb 2 Te 3 heterostructure, where the ferromagnetic Co layer is deposited by atomic layer deposition on top of the Sb 2 Te 3 topological insulator, which is grown by metal organic chemical vapor deposition. In particular, broadband ferromagnetic resonance is employed to characterize the Co/Sb 2 Te 3 system and the reference Co/Pt heterostructure. For Co/Sb 2 Te 3, we extract an effective magnetic anisotropy constant K e f f= 4.26∙ 10 6 erg cm 3, which is an order of magnitude higher than in Co/Pt K eff= 0.43∙ …
Publication date: 
1 Jan 2020

Emanuele Longo, Claudia Wiemer, Matteo Belli, Raimondo Cecchini, Massimo Longo, Matteo Cantoni, Christian Rinaldi, Michael D. Overbeek, Charles H. Winter, Gianluca Gubbiotti, Graziella Tallarida, Marco Fanciulli, Roberto Mantovan

Biblio References: 
Volume: 509 Issue: 166885
Journal of Magnetism and Magnetic Materials