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Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e., related to interactions with the dielectric layer), especially for n‐type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low‐frequency (
Publication date: 
25 Feb 2021

Marc‐Antoine Stoeckel, Yoann Olivier, Marco Gobbi, Dmytro Dudenko, Vincent Lemaur, Mohamed Zbiri, Anne AY Guilbert, Gabriele D'Avino, Fabiola Liscio, Andrea Migliori, Luca Ortolani, Nicola Demitri, Xin Jin, Young‐Gyun Jeong, Andrea Liscio, Marco‐Vittorio Nardi, Luca Pasquali, Luca Razzari, David Beljonne, Paolo Samorì, Emanuele Orgiu

Biblio References: 
Pages: 2007870
Advanced Materials