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In this work, we investigate, by μ-Raman spectroscopy the distribution of stress field on a micro-machined structures. They were realized on a 3C-SiC substrate, grown on a Silicon On Insulator (SOI) wafer, after lithography and etching processes. Various structures, such as strain gauge, single and double clamped beams, were analyzed, showing different stress distributions. All the structures show an intense variation of stress close to the undercut region.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2022

Francesco La Via, Luca Belsito, Ferri Matteo, Sergio Sapienza, Alberto Roncaglia, Marcin Zielinski, Viviana Scuderi

Biblio References: 
Volume: 1062 Pages: 320-324
Materials Science Forum