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Encapsulating SiC with a carbon layer (C-cap) is a widely used technique to avoid step bunching during post implantation annealing. In this work we propose a mechanism that explains the roughening that the surface unavoidably undergoes during annealing under the C-cap. We investigated the reactions occurring at the interface between 4H-SiC and the C-cap by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and atomic force microscopy carried out at different stages of the sample processing: just after annealing, after C-cap removal in dry Oxygen, and after cleaning in buffered oxide etch solution. Our observations show that, even though the C-cap roughens for increasing annealing temperature and time, it is not visibly damaged even after 1950 C 30 min annealing. After the C-cap removal the 4H-SiC surface was covered by a network of clusters that are eventually removed by buffered …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2022

Mariaconcetta Canino, Fulvio Mancarella, Filippo Bonafè, Franco Corticelli, Cristiano Albonetti, Roberta Nipoti

Biblio References: 
Volume: 1062 Pages: 235-240
Materials Science Forum