Conferences | Bologna UNIT

N Zhang, M Scaffardi, MN Malik, V Toccafondo, C Klitis, MPJ Lavery, G Meloni, F Fresi, E Lazzeri, D Marini, J Zhu, X Cai, S Yu, L Potì, G Preve, A Bogoni, M Sorel

2018-03-11

Biblio references: Pages: 1-3

Origin: 2018 Optical Fiber Communications Conference and Exposition (OFC)

4 OAM x 4 WDM Optical Switching Based on an Innovative Integrated Tunable OAM Multiplexer

N Zhang, Mirco Scaffardi, MN Malik, V Toccafondo, Charalambos Klitis, Martin PJ Lavery, Gianluca Meloni, Francesco Fresi, Emma Lazzeri, D Marini, J Zhu, X Cai, S Yu, Luca Potì, G Preve, Antonella Bogoni, Marc Sorel

2018-03-11

Biblio references: Pages: Th3H. 1

Origin: Optical Fiber Communication Conference

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

Hussein M Ayedh, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

2018-01-01

Biblio references: Volume: 924 Pages: 233-236

Origin: Materials Science Forum

About the Electrical Activation of 1× 1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500-1950° C

Roberta Nipoti, Alberto Carnera, Giovanni Alfieri, Lukas Kranz

2018-01-01

Biblio references: Volume: 924 Pages: 333-338

Origin: Materials Science Forum

Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10-4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

Roberta Nipoti, Maurizio Puzzanghera, Maria Concetta Canino, Giovanna Sozzi, Paolo Fedeli

2018-01-01

Biblio references: Volume: 924 Pages: 385-388

Origin: Materials Science Forum

Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC

Enhanced-performance fibre Brillouin ring laser for Brillouin sensing applications

Study of Brillouin optical time domain analysis fiber sensing with stabilized low-RIN pump-probe laser scheme

Tunable lower-RIN Brillouin fiber ring laser for BOTDA sensing

A 48-spot single-molecule FRET setup with periodic acceptor excitation (Conference Presentation)

4 OAM× 4 WDM Optical Switching Based on an Innovative Integrated Tunable OAM Multiplexer

4 OAM x 4 WDM Optical Switching Based on an Innovative Integrated Tunable OAM Multiplexer

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

About the Electrical Activation of 1× 1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500-1950° C

Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10-4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

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