2008 | Bologna UNIT

Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy

A Parisini, V Morandi, S Solmi, Pier Giorgio Merli, Damiano Giubertoni, Massimo Bersani, JA Van den Berg

2008-06-30

Biblio references: Volume: 92 Issue: 26 Pages: 261907

Origin: Applied Physics Letters

Transient Control in SOA-Based WDM Metro-Ring Networks Under Add–Drop Operation Using a Reservoir Channel

Tomasz Rogowski, Stefano Faralli, Gabriele Bolognini, Fabrizio Di Pasquale, Rodolfo Di Muro, Bimal Nayar

2008-06-17

Biblio references: Volume: 20 Issue: 13 Pages: 1175-1177

Origin: IEEE Photonics Technology Letters

Atomic ordering in CuZnAl shape memory alloys investigated via x-ray absorption and diffraction

G Ciatto, PL Solari, S De Panfilis, AL Fiorini, S Amadori, L Pasquini, E Bonetti

2008-06-16

Biblio references: Volume: 92 Issue: 24 Pages: 241903

Origin: Applied Physics Letters

Waveguide formation by ion implantation in Er doped optical materials

GG Bentini, M Chiarini, M Bianconi, F Bergamini, D Castaldini, GB Montanari, A Bogoni, L Potì, S Sugliani, A Nubile, P De Nicola, L Gallerani, G Pennestrì, S Petrini

2008-06-01

Biblio references: Volume: 266 Issue: 12-13 Pages: 3120-3124

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

CoPt alloy grown on the WSe 2 (0001) van der Waals surface

Denys Makarov, Fabiola Liscio, Christoph Brombacher, Jean-Paul Simon, Günter Schatz, Mireille Maret, Manfred Albrecht

2008-06-01

Biblio references: Volume: 320 Issue: 12 Pages: 1858-1866

Origin: Journal of magnetism and magnetic materials

Structure, morphology, and growth dynamics of perfluoro‐pentacene thin films

Stefan Kowarik, Alexander Gerlach, Alexander Hinderhofer, Silvia Milita, Francesco Borgatti, Federico Zontone, Toshiyasu Suzuki, Fabio Biscarini, Frank Schreiber

2008-06-01

Biblio references: Volume: 2 Issue: 3 Pages: 120-122

Origin: physica status solidi (RRL)–Rapid Research Letters

Metal oxide nanowire and thin-film-based gas sensors for chemical warfare simulants detection

Andrea Ponzoni, Camilla Baratto, Sebastiano Bianchi, Elisabetta Comini, Matteo Ferroni, Matteo Pardo, Marco Vezzoli, Alberto Vomiero, Guido Faglia, Giorgio Sberveglieri

2008-05-23

Biblio references: Volume: 8 Issue: 6 Pages: 735-742

Origin: IEEE Sensors Journal

Optimization of a wafer-level process for the fabrication of highly reproducible thin-film MOX sensors

I Elmi, S Zampolli, GC Cardinali

2008-05-14

Biblio references: Volume: 131 Issue: 2 Pages: 548-555

Origin: Sensors and Actuators B: Chemical

Electro-optically induced absorption in α-Si: H/α-SiCN waveguiding multistacks

Francesco G Della Corte, Sandro Rao, Maria A Nigro, Francesco Suriano, Caterina Summonte

2008-05-12

Biblio references: Volume: 16 Issue: 10 Pages: 7540-7550

Origin: Optics Express

Ion Implantation: A Method of Producing Low-k Silicon Oxide-based Materials

Elisa Leoni, Domingos De Sousa Meneses, Esidor Ntsoenzok, Mariaconcetta Canino, Gabrielle Regula

2008-05-09

Biblio references: Volume: 13 Issue: 2 Pages: 385

Origin: ECS Transactions

Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy

Transient Control in SOA-Based WDM Metro-Ring Networks Under Add–Drop Operation Using a Reservoir Channel

Atomic ordering in CuZnAl shape memory alloys investigated via x-ray absorption and diffraction

Waveguide formation by ion implantation in Er doped optical materials

CoPt alloy grown on the WSe 2 (0001) van der Waals surface

Structure, morphology, and growth dynamics of perfluoro‐pentacene thin films

Metal oxide nanowire and thin-film-based gas sensors for chemical warfare simulants detection

Optimization of a wafer-level process for the fabrication of highly reproducible thin-film MOX sensors

Electro-optically induced absorption in α-Si: H/α-SiCN waveguiding multistacks

Ion Implantation: A Method of Producing Low-k Silicon Oxide-based Materials

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