Journals | Bologna UNIT

Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD

SP Bergamini, F Rao, R Hoff, AM Nipoti, E Saddow, SE Oborina

2006-01-01

Biblio references: Volume: 527529 Pages: 839-842

Origin: Materials Science Forum

Hydrogen Desorption from MgH2 Based Nano-Micro Composites

Ennio Bonetti, Anna Lisa Fiorini, Luca Pasquini, Nadica Abazovic, Amelia Montone, Marco Vittori Antisari

2006-01-01

Biblio references: Volume: 971

Origin: MRS Online Proceedings Library Archive

Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

A Moscatelli, F Poggi, A Marino, G Scorzoni, R Sanmartin, M Nipoti

2006-01-01

Biblio references: Volume: 527529 Pages: 979-982

Origin: Materials Science Forum

Metal oxide nanocrystals multi-parametric gas sensors

E Comini, C Baratto, M Ferroni, G Faglia, G Sberveglieri

2006-01-01

Biblio references: Volume: 3

Origin: 稀有金属材料与工程

High temperature phases of nanostructured tungsten oxide for gas sensing applications

Andrea Ponzoni, Elisabetta Comini, Matteo Ferroni, Guido Faglia, Giorgio Sberveglieri

2006-01-01

Biblio references: Volume: 915

Origin: MRS Online Proceedings Library Archive

TEM/CBED investigation of strain induced by Ti-salicides in shallow trench Si isolation structures

A Armigliato, A Spessot, R Balboni, A Benedetti, GP Carnevale, S Frabboni, G Mastracchio, G Pavia

2006-01-01

Biblio references: Volume: 99 Pages: 64504

Origin: J. of Applied Physics

O. Nilsen and Fjellvag, H

M Avice, U Grossner, I Pintilie, BG Svensson, M Servidori, R Nipoti

2006-01-01

Biblio references: Volume: 89 Pages: 222103

Origin: Appl. Phys. Lett

Elebeoba E May, Thomas D Schneider, Gérard Battail, Manish K Gupta, Dónall A Mac Dónaill, Gail L Rosen, Diego Luis Gonzalez, Simone Giannerini, Rodolfo Rosa, Daniel Nicorici, Olli Yli-Harja, Jaakko Astola, Mladen A Vouk, Donald L Bitzer

2006-01-01

Biblio references: Pages: 2

Origin: IEEE Engineering in Medicine and Biology Magazine

Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

R Bergamini, F Nipoti, F Poggi, A Moscatelli, M Bertuccio, G Canino

2006-01-01

Biblio references: Volume: 527529 Pages: 815-818

Origin: Materials Science Forum

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

Roberta Nipoti, Alberto Carnera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, Mara Passini

2006-01-01

Biblio references: Volume: 911

Origin: MRS Online Proceedings Library Archive

Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD

Hydrogen Desorption from MgH2 Based Nano-Micro Composites

Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

Metal oxide nanocrystals multi-parametric gas sensors

High temperature phases of nanostructured tungsten oxide for gas sensing applications

TEM/CBED investigation of strain induced by Ti-salicides in shallow trench Si isolation structures

O. Nilsen and Fjellvag, H

MEDICINEAND BIOLOGY

Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

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