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INTRODUCTION

 

This laboratory is dedicated to isotropic and anisotropic etching  of thin films a by wet and dry processes. Here are located also the facilities for substrate and photolithographic mask surface cleaning.

CLEAN ROOM ISO 5 (100 CLASS)

PRINCIPAL FACILITIES

  • METAL
    • ALUMINUM, ALUMINUM ALLOY
    • NICHEL
    • TITANIUM
    • GOLD
    • CHROME
  • SILICON/POLYSILICON (H2O + HF + HNO3
  • SILICON OXIDE (DILUTED HF, BUFFERED HF)
PLASMA ETCHING AND ASHING

RIE PLASMALAB u80

  • THIN FILM ETCHING
  • SILICON AND POLYSILICON ETCHING CHLORINE BASED PLASMA
    • ETCH RATE UP TO 50 nm/min
    • MAX THICK FILM: 2000 nm
  • SILICON OXIDE, SILICON NITRIDE FLUORINE BASED PLASMA
    • ETCH RATE UP TO 30 nm/min
    • MAX THICK FILM: 2000 nm
  • SILICON CARBIDE ETCHING
    • ETCH RATE UP TO 30 nm/min
    • MAX THICK FILM: 1500 nm
  • SUBSTRATE: SILICON, SiC, FUSED SILICA
  • DIMENSION: UP TO 4" WAFER
  • CMOS COMPATIBLE SUBSTRATE ONLY

RIE SENTECH SI 591

  • THIN FILM METAL AND SILICON ETCHING
  • ALUMINUM ALLOY ETCHING CHLORINE BASED PLASMA AND PLASSIVATION PROCESS
    • ETCH RATE: UP TO 100 nm/min
  • SILICON/POLYSILICON ETCHING BY SF6/O2 PLASMA: ANISOTROPIC AND ISOTROPIC ETCHING
    • ETCH RATE FROM 200 nm/min UP TO 1 um/min
 

TEPLA PLASMA OXYGEN 

  • PHOTORESIST PLASMA ASHING

​​DEEP REACTIVE ION ETCHING ALCATEL A601E

  • DEEP ETCHING OF SILICON AND SILICON OXIDE
  • ANTI-NOTCHING SYSTEM
  • DIFFERENT PROCESSES ARE AVAIABLE
    • HIGH ETCH RATE PROCESS (UP TO 12 um/min)
    • LOW ROUGHNESS PROCESS (UP TO 2 um/min)
  • THROUGHT WAFER ETCHING 
  • DEEP SILICON OXIDE ETCHING UP TO 10 um

FOR MORE INFORMATION: MICROSYSTEM PROCESS

SUBSTRATE CLEANING AND POLISHING

  • PIRANHA
  • RCA1, RCA1 MODIFIED, AND RCA2 
  • WET STRIPPING AND POLISHING BY ACETONE AND ISOPROPANOLE

PROCESSES AVAILABLE

 
 
 

CONTACT PERSON: FABRIZIO TAMARRI

 

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