WET AND DRY ETCHING BAY | Bologna UNIT

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WET AND DRY ETCHING BAY

INTRODUCTION

This laboratory is dedicated to isotropic and anisotropic etching of thin films a by wet and dry processes. Here are located also the facilities for substrate and photolithographic mask surface cleaning.

CLEAN ROOM ISO 5 (100 CLASS)

PRINCIPAL FACILITIES

	METAL ALUMINUM, ALUMINUM ALLOY NICHEL TITANIUM GOLD CHROME SILICON/POLYSILICON (H₂O + HF + HNO₃) SILICON OXIDE (DILUTED HF, BUFFERED HF)
PLASMA ETCHING AND ASHING
RIE PLASMALAB u80
	THIN FILM ETCHING SILICON AND POLYSILICON ETCHING CHLORINE BASED PLASMA ETCH RATE UP TO 50 nm/min MAX THICK FILM: 2000 nm SILICON OXIDE, SILICON NITRIDE FLUORINE BASED PLASMA ETCH RATE UP TO 30 nm/min MAX THICK FILM: 2000 nm SILICON CARBIDE ETCHING ETCH RATE UP TO 30 nm/min MAX THICK FILM: 1500 nm SUBSTRATE: SILICON, SiC, FUSED SILICA DIMENSION: UP TO 4" WAFER CMOS COMPATIBLE SUBSTRATE ONLY
	RIE SENTECH SI 591 THIN FILM METAL AND SILICON ETCHING ALUMINUM ALLOY ETCHING CHLORINE BASED PLASMA AND PASSIVATION PROCESS ETCH RATE: UP TO 100 nm/min SILICON/POLYSILICON ETCHING BY SF₆/O₂ PLASMA: ANISOTROPIC AND ISOTROPIC ETCHING ETCH RATE FROM 200 nm/min UP TO 1 um/min
	TEPLA PLASMA OXYGEN PHOTORESIST PLASMA ASHING
	DEEP REACTIVE ION ETCHING ALCATEL A601E DEEP ETCHING OF SILICON AND SILICON OXIDE ANTI-NOTCHING SYSTEM DIFFERENT PROCESSES ARE AVAIABLE HIGH ETCH RATE PROCESS (UP TO 12 um/min) LOW ROUGHNESS PROCESS (UP TO 2 um/min) THROUGHT WAFER ETCHING DEEP SILICON OXIDE ETCHING UP TO 10 um FOR MORE INFORMATION: MICROSYSTEM PROCESS
SUBSTRATE CLEANING AND POLISHING
	PIRANHA RCA1, RCA1 MODIFIED, AND RCA2 WET STRIPPING AND POLISHING BY ACETONE AND ISOPROPANOLE

PROCESSES AVAILABLE

CONTACT PERSON: FABRIZIO TAMARRI

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