Forward J D–V D curves of 4H− SiC p− i− n diodes are analyzed by means of an analytical model in order to justify the presence of a crossing− point. The interlacing behaviour occurring in the J D–V D curves of 4H− SiC diodes at different temperatures is predicted by a simple formula, which can be used for a first-order design of such devices. Numerical simulation of diodes designed with different epilayer thickness and carrier lifetime values have been used in order to analyze the crossing− point behaviour. Comparisons with experimental data confirm the analytic and simulated results.