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Forward J D–V D curves of 4H− SiC p− i− n diodes are analyzed by means of an analytical model in order to justify the presence of a crossing− point. The interlacing behaviour occurring in the J D–V D curves of 4H− SiC diodes at different temperatures is predicted by a simple formula, which can be used for a first-order design of such devices. Numerical simulation of diodes designed with different epilayer thickness and carrier lifetime values have been used in order to analyze the crossing− point behaviour. Comparisons with experimental data confirm the analytic and simulated results.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2015

Luigi Di Benedetto, Gian Domenico Licciardo, Salvatore Bellone, Roberta Nipoti

Biblio References: 
Volume: 821 Pages: 628-631
Materials Science Forum