Conferences | Bologna UNIT

Integration of metal oxide nanowires in dye sensitized & quantum dot solar cells

Alberto Vomiero, Camilla Baratto, Elisabetta Comini, Isabella Concina, Guido Faglia, Matteo Falasconi, Matteo Ferroni, G Jimenez, I Kholmanov, Nicola Poli, Silvia Todros, Giorgio Sberveglieri

2009-01-01

Biblio references: Pages: ---

Origin: 34th IEEE Photovoltaic Specialists Conference

Crystallography of CuZnAl Austenite via Vombined XANES, EXAFS and XRD Analysis.

Gianluca Ciatto, Pier Lorenzo Solari, Simone De Panfilis, Anna Lisa Fiorini, Stefano Amadori, Luca Pasquini, Ennio Bonetti

2009-01-01

Biblio references: Volume: 65 Pages: S200-S200

Origin: ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES

Conductometric gas-sensors based on metal-oxide nanowires for chemical warfare agents detection, at conference Gas sensors based on semiconducting metal oxides

Elisabetta Comini, Andrea Ponzoni, Matteo Ferroni, Guido Faglia, Giorgio Sberveglieri

2009-01-01

Biblio references: Pages: ---

Origin: conference Gas sensors based on semiconducting metal oxides

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes

Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

2009-01-01

Biblio references: Volume: 600 Pages: 1027-1030

Origin: Materials Science Forum

Growth and characterization of Metal Oxide Nanowires for Sensing and Advanced Applications

Elisabetta Comini, Isabella Concina, Matteo Ferroni, Guido Faglia, Alberto Vomiero, Giorgio Sberveglieri

2009-01-01

Biblio references: Pages: ---

Origin: International Conference Material Science in the Age of Nano

Nanowire-based Photoanodes for Third Generation Excitonic Solar Cells

Alberto Vomiero, Camilla Baratto, Antonio Braga, Elisabetta Comini, Isabella Concina, Guido Faglia, Matteo Ferroni, G Jimenez, I Kholmanov, Silvia Todros, Giorgio Sberveglieri

2009-01-01

Biblio references: Pages: ---

Origin: International Symposium on Advanced Ceramics and Technology for Sustainable Energy Applications (ACTSEA-2009)

Metal oxide nanowires: promising chemical sensing materials

Elisabetta Comini, Camilla Baratto, Guido Faglia, Matteo Ferroni, Andrea Ponzoni, Giorgio Sberveglieri

2009-01-01

Biblio references: Pages: ---

Origin: 8th Asian conference on chemical sensors

CV and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+ n 4H-SiC Diodes

Filippo Fabbri, Francesco Moscatelli, Antonella Poggi, Roberta Nipoti, Anna Cavallini

2009-01-01

Biblio references: Volume: 615 Pages: 469-472

Origin: Materials Science Forum

Gas Sensors Based on Metal Oxide Nanowire Bundles: Preparation and IV Characterization

Andrea Ponzoni, Alberto Vomiero, Elisabetta Comini, Matteo Ferroni, Guido Faglia, Giorgio Sberveglieri

2009-01-01

Biblio references: Pages: ---

Origin: Joint conferences on Advanced Materials (FNMA 09 & IMIM 09)

Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Bengt Gunnar Svensson

2009-01-01

Biblio references: Volume: 615 Pages: 533-536

Origin: Materials Science Forum

Integration of metal oxide nanowires in dye sensitized & quantum dot solar cells

Crystallography of CuZnAl Austenite via Vombined XANES, EXAFS and XRD Analysis.

Conductometric gas-sensors based on metal-oxide nanowires for chemical warfare agents detection, at conference Gas sensors based on semiconducting metal oxides

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes

Growth and characterization of Metal Oxide Nanowires for Sensing and Advanced Applications

Nanowire-based Photoanodes for Third Generation Excitonic Solar Cells

Metal oxide nanowires: promising chemical sensing materials

CV and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+ n 4H-SiC Diodes

Gas Sensors Based on Metal Oxide Nanowire Bundles: Preparation and IV Characterization

Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

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