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Hydrogenated amorphous silicon (a-Si:H) has been already considered for the objective of passive optical elements, like waveguides and ring resonators, within photonic integrated circuits at λ = 1.55 μm. However the study of its electro-optical properties is still at an early stage, therefore this semiconductor in practice is not considered for light modulation as yet. We demonstrated, for the first time, effective electro-optical modulation in a reverse biased a-Si:H p-i-n waveguiding structure. In particular, phase modulation was studied in a waveguide integrated Fabry-Perot resonator in which the V_π⋅L_π product was determined to be 
63 V⋅cm. Characteristic switch-on and switch-off times of 14 ns were measured. The device employed a wider gap amorphous silicon carbide 
(a-SiC:H) film for the lower cladding layer instead of silicon oxide. In this way the highest temperature involved in the fabrication process was …
Optical Society of America
Publication date: 
14 Feb 2011

Francesco G Della Corte, Sandro Rao, Giuseppe Coppola, Caterina Summonte

Biblio References: 
Volume: 19 Issue: 4 Pages: 2941-2951
Optics express