Ion implantation is a relevant technology for the fabrication of pn interfaces in several SiC electronic devices; ion implanted source/drain and body regions in commercial 4H-SiC MOSFET  and buried grids in JBSD  can be cited as examples. Previous studies have shown that the efficiency of the electrical doping by ion implantation increases with the increase of the post implantation annealing temperature [3-4] and time . Previous studies have also shown that n-type 4H-SiC epi-layers treated at so high temperatures as those ...
6 Oct 2016
PRiME 2016/230th ECS Meeting (October 2-7, 2016)