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A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb diffusion produced through laser annealing of the Ge surface in the melting regime. This process gives rise to a very thin ( nm) n-doped layer, as determined by SIMS measurement, while preserving the defect-free morphology of HPGe surface. A small prototype of gamma ray detector with a Sb laser-diffused contact was produced and characterized, showing low leakage currents and good spectroscopy data with different gamma ray sources.
Springer Berlin Heidelberg
Publication date: 
1 Mar 2018

G Maggioni, S Carturan, W Raniero, S Riccetto, F Sgarbossa, V Boldrini, R Milazzo, DR Napoli, D Scarpa, A Andrighetto, E Napolitani, D De Salvador

Biblio References: 
Volume: 54 Issue: 3 Pages: 34
The European Physical Journal A