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Type: 
Book
Description: 
Arsenic implanted specimens after liquid phase epitaxy followed by annealing treatment were studied in the range 450 C-900 C. A detailed analysis of As and interstitial profiles reveals that arsenic diffuses, starting from 550 C, in two stages: as an interstitial-arsenic complex for 550 C≤ T≤ 650 C and independently of interstitials for T≥ 750* C. It is shown that interstitials are created during the liquid to solid transformation prior to the annealing treatments.ABSTRACT
Publisher: 
CRC Press
Publication date: 
31 Jan 2021
Authors: 

Aa Parisini, A Bourret, A Armigliato

Biblio References: 
Pages: 491-496
Origin: 
Microscopy of Semiconducting Materials, 1987