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CLEAN ROOM ISO 5 (100 CLASS)

INTRODUCTION

Individually or in combination with e-beam lithography, the SCILL NIL system can be used for large-area device nanofabrication. Nano Imprint Lithography (NIL) is an emerging lithographic technology that promises high throughput patterning of nanostructures. With NIL it’s possible to achieve sub-50nm resolution features over large areas. NIL can significantly simplify the production of nanostructures using a wide variety of materials. NIL intrinsically has better dimensional control that can be achieved using conventional UV lithography
Dual beam FIB Zeiss CrossBeam 340

The CrossBeam 340 dual beam facility has a Gemini FEG electron column and a Ga ion column and is equipped with a gas injection system, a Raith Elphy Quantum nanolithography attachment and Kleindiek micromanipulators. This instrument is located in clean room environment. (Dr. I. Elmi, Dr. L. Ortolani)

This instrument allows operation at micro-nanometric level, which includes (but not limited to):

  • Imaging with ET and in-column SE detector, BSE detector
  • Cutting and building of nano-structures
  • Operation in high-pressure and environmental condition
  • Failure analysis of device with combined use of ion milling and SEM imaging
  • TEM sample preparation
CONTAC PERSON: LUCA ORTOLANI, IVAN ELMI
TECHNICAL SPECIFICATIONS:

Scanning Electron Microscope (SEM) Features 
•    GEMINI I column type
•    Max. resolution ≈ 1 nm @ 15 kV
•    Accelerating voltage: from 20 V to 30 kV
•    Current range from 5 pA to 20 nA
•    Magnification range from 12x to 2.000.000x
•    Variable Pressure mode up to 70 Pa

 

Electron Beam Lithography (EBL) Features 
•    RAITH ELPY Quantum system
•    NanoSuite 6.0
•    Up to 4’ wafer sample dimension

Gas Injection System (GIS) Features 
•    5 channels GIS
•    Charge Compensator
•    Deposition of: Pt, SiO2, C
•    Etching of: Si, SiO2
 

Focused Ion Beam (FIB) Features 
•    Max. resolution ≈ 3 nm @ 15 kV
•    Accelerating voltage: from 0,5 kV a 30 kV
•    Current range from 1 pA to 100 nA
•    Magnification range from 300x to 500.000x
•    Max. view field 580 μm x 580 μm

UV- IMPRINT LITHOGRAPHY

SUBSTRATE CONFORMAL IMPRINT LITHOGRAPHY (SCIL)

UV-NIL is a low-cost production technology based on UV-curing. It has been developed as a costeffective alternative to high-resolution e-beam lithography to print nanometer sized geometries.
UV-NIL solutions may be the enabling technique for next generation semiconductor, MOEMS, NEMS and optoelectronic technology

TECHNICAL SPECIFICATIONS:

  • Substrate size: 4 inch, 2 inch
  • Stamp size: 65 x 65 x 6.35 mm
  • Imprintable area: ≤ 25 mm x 25 mm
  • Resist thickness: from less than 100 nm to several hundred μm (dependent on stamp structure and process)
  • Exposure type: Vac/ hard contact
  • WEC type: Cont/ mask holder spacers
  • Alignment gap: 1 ... 1000 μm
  • Separation: Automatic/ manual
  • Resolution: < 50 nm, mainly limited by the stamp fabrication
REPLICATION TOOS FOR SOFT-MASTER NANOIMPRINT

SCIL STAMP REPLICATION

The Substrate Conformal Imprint Lithography (SCIL)technique bridges the gap between UV-NIL with rigid stamp for best resolution and soft stamp for large-area patterning. SCIL uses a sequential imprinting principle that is based on capillary forces
instead of backside pressure, which minimizes air inclusions even on large areas, ensuring highest uniformity.
The sequential separation of stamp and substrate avoids high forces and allows for a clean and reliable disconnection without damage to the patterned structures.

The Master Replication Tooling (MRT)
Philips Innovation Services has developed a dedicated SCIL master replication tooling (MRT) 
The MRT is supported by a temperature controller for both lower and upper chucks.

The SUSS Peel-Off Tooling (POT)
In order to separate the cured working stamp from the master mold SUSS MicroTec has designed a dedicated peel-off tooling (POT).

CONTACT DEEP UV PHOTOLITHOGRAPHY 

 

 

MULTILEVEL POLYSLICON NANOWIRES MANUFACTURED BY DEEP UV PHOTOLITHOGRAPHY AND SPACER TECHNOLOGY FIB CROSS-SECTIONING OF A SUBMICRON SILICON WAVEGUIDE 

   

PROCESSES AVAILABLE

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