ETCHING PROCESSES
| DRY ETCHING | |||||
| MATERIAL | CHEMISTRY | ETCH RATE | MASK MATERIAL | DIMENSION | CMOS COMP |
| REACTIVE ION ETCHING | |||||
| SILICON OXIDE | CHF3/Ar | 30 nm/min | POLYSILICON, PHOTORESIST | PIECE UP TO 4 INCH | YES |
| SILICON NITRIDE | CHF3/Ar | 16 nm/min | POLYSILICON, PHOTORESIST | YES | |
| SILICON/POLYSILICON | SiCl4 | 50 nm/min | PHOTORESIST, SiO2 | PIECE UP TO 4 INCH | YES |
| SILICON CARBIDE | CHF3/Ar/O2 | 30 nm/min | PHOTORESIST, SiO2, POLYSILICON | PIECE UP TO 4 INCH | YES |
| SILICON/POLYSILICON ISOPTROPIC ETCHING | SF6 | 200 - 800 nm/min | PHOTORESIST, SiO2 | PIECE UP TO 4 INCH | NO |
| SILICON/POLY ANISOTROPIC ETCHING | SF6/O2 | 600 - 1000 nm/min | PHOTORESIST, SiO2 | PIECE UP TO 4 INCH | NO |
| ALUMINUM | Cl2/BCl3/Ar | 100 nm/min | PHOTORESIST | PIECE UP TO 4 INCH | NO |
| MATERIAL | CHEMISTRY | ETCH RATE | MASK MATERIAL | DIMENSION |
| DEEP REACTIVE ION ETCHING | ||||
| SILICON OXIDE | C4F8, He, CH4 | 300 - 350 nm/min | PHOTORESIST, POLYSILICON @ -20 °c | 4 INCH |
| SILICON (BOSCH PROCESS) | SF6, C4F8 | 1 um - 10 um/min | PHOTORESIST, SILICON OXIDE | 4 INCH |
| WET ETCHING | ||
| BULK SILICON & GLASS ETCHING | ||
| ANISOTROPIC SILICON ETCH | KOH, TMAH | |
| ISOTROPIC GLASS ETCH | HF | |
| THIN & THICK FILM ETCHING | ||
| DIELECTRIC ETCHING | HF, BUFFERED HF, HF VAPOR | |
| METALS ETCHING | ALUMINUM, CHROME, ITO, NICKEL, GOLD, TITANIUM | |
| RESIST STRIPPING | SOLVENT | |
| WAFER CLEANING | PIRANHA, RCA1&2 | |
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CONTACT PERSON: FULVIO MANCARELLA
