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GROWTH AND DEPOSITION PROCESSES

PROCESS THICKNESS SUBSTRATE DIMENSION CMOS COMP

THERMAL OXIDE (WET AND DRY)

10 nm - 2000 nm

SILICON, SiC

PIECE UP TO 4 INCH

YES

CHEMICAL VAPOR DEPOSITION PROCESSES

SiO2 LPCVD LOW STRESS @ 450 °C

50 nm - 6000 nm

Si, SiC, FUSED SILICA, QUARTZ, Ge

PIECE UP TO 4 INCH

YES

TEOS LPCVD LOW STRESS @ 850 °C

50 nm - 2000 nm

Si, SiC, FUSED SILICA, QUARTZ

PIECE UP TO 4 INCH

YES

STOICHIOMETRIC Si3N4 (HIGH STRESS) @ 780 °C 20 nm - 400 nm Si, SiC, FUSED SILICA, QUARTZ PIECE UP TO 4 INCH YES
POLYSILICON (UNDOPED) @ 600 °C 20 nm - 3000 nm Si, SiC, FUSED SILICA, QUARTZ PIECE UP TO 4 INCH YES
PHISICAL VAPOR DEPOSITION PROCESSES
SPUTTERING

 

 

 

 

ALUMINUM/SI (1%) 10 nm - 2000 nm Si, SiC, FUSED SILICA, QUARTZ PIECE UP TO 4 INCH -
TITANIUM 10 nm - 200 nm Si, SiC, FUSED SILICA, QUARTZ PIECE UP TO 4 INCH -
PLATINUM 10 nm - 300 nm Si, SiC, FUSED SILICA, QUARTZ PIECE UP TO 4 INCH -
GOLD 10 nm - 2000 nm NO RESTRICTION PIECE UP TO 4 INCH -
TITANIUM NITRIDE 10 nm - 100 nm NO RESTRICTION PIECE UP TO 4 INCH -
ELECTRON GUN
COPPER 10 nm - 1000 nm NO RESTRICTION PIECE UP TO 4 INCH -
ALUMINUM 10 nm - 1000 nm NO RESTRICTION PIECE UP TO 4 INCH -
CHROME 10 nm - 500 nm NO RESTRICTION PIECE UP TO 4 INCH -
NICHEL 10 nm - 500 nm NO RESTRICTION PIECE UP TO 4 INCH -
TITANIUM 10 nm -200 nm NO RESTRICTION PIECE UP TO 4 INCH -

 

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CONTACT PERSON: FULVIO MANCARELLA