GROWTH AND DEPOSITION PROCESSES
| PROCESS | THICKNESS | SUBSTRATE | DIMENSION | CMOS COMP |
|
THERMAL OXIDE (WET AND DRY) |
10 nm - 2000 nm |
SILICON, SiC |
PIECE UP TO 4 INCH |
YES |
| CHEMICAL VAPOR DEPOSITION PROCESSES | ||||
|
SiO2 LPCVD LOW STRESS @ 450 °C |
50 nm - 6000 nm |
Si, SiC, FUSED SILICA, QUARTZ, Ge |
PIECE UP TO 4 INCH |
YES |
|
TEOS LPCVD LOW STRESS @ 850 °C |
50 nm - 2000 nm |
Si, SiC, FUSED SILICA, QUARTZ |
PIECE UP TO 4 INCH |
YES |
| STOICHIOMETRIC Si3N4 (HIGH STRESS) @ 780 °C | 20 nm - 400 nm | Si, SiC, FUSED SILICA, QUARTZ | PIECE UP TO 4 INCH | YES |
| POLYSILICON (UNDOPED) @ 600 °C | 20 nm - 3000 nm | Si, SiC, FUSED SILICA, QUARTZ | PIECE UP TO 4 INCH | YES |
| PHISICAL VAPOR DEPOSITION PROCESSES | ||||
| SPUTTERING |
|
|
|
|
| ALUMINUM/SI (1%) | 10 nm - 2000 nm | Si, SiC, FUSED SILICA, QUARTZ | PIECE UP TO 4 INCH | - |
| TITANIUM | 10 nm - 200 nm | Si, SiC, FUSED SILICA, QUARTZ | PIECE UP TO 4 INCH | - |
| PLATINUM | 10 nm - 300 nm | Si, SiC, FUSED SILICA, QUARTZ | PIECE UP TO 4 INCH | - |
| GOLD | 10 nm - 2000 nm | NO RESTRICTION | PIECE UP TO 4 INCH | - |
| TITANIUM NITRIDE | 10 nm - 100 nm | NO RESTRICTION | PIECE UP TO 4 INCH | - |
| ELECTRON GUN | ||||
| COPPER | 10 nm - 1000 nm | NO RESTRICTION | PIECE UP TO 4 INCH | - |
| ALUMINUM | 10 nm - 1000 nm | NO RESTRICTION | PIECE UP TO 4 INCH | - |
| CHROME | 10 nm - 500 nm | NO RESTRICTION | PIECE UP TO 4 INCH | - |
| NICHEL | 10 nm - 500 nm | NO RESTRICTION | PIECE UP TO 4 INCH | - |
| TITANIUM | 10 nm -200 nm | NO RESTRICTION | PIECE UP TO 4 INCH | - |
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