THERMAL PROCESSES
| PROCESS | SUBSTRATE | TEMPERATURE | DIMENSION | CMOS COMP. |
| PHOSPHORUS DOPING | SILICON | 700 - 920 °C | PIECE UP TO 4 INCH | YES |
| FURNACE ANNEALING | SILICON, SiC | 800 °C - 1100 °C | PIECE UP TO 4 INCH | YES |
| RAPID THERMAL ANNEALING (LAMP) | Si, SiC, Ge | 300 °C - 1100 °C | PIECE UP TO 4 INCH | YES |
| ULTRA HIGH TEMPERATURE ANNEALING (RF) | Si, SiC | 700 °C - 1950 °C | UP TO 2 INCH | YES |
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CONTACT PERSON: FULVIO MANCARELLA
