MICROSYSTEM PROCESSES

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INTRODUCTION

The Microsystems Laboratory is a semiconductor processing facility specializing in the fabrication of various types of chemical, physical sensors and multifunctional microsystems. The facility consists of more than 50 m² of Class 100 (ISO 5) clean room space. Process capabilities Deep plasma etching, wet anisistropic silicon etching, deep glass wet etching and wafer bonder.

The microsystem laboratory works in synergy with all the other laboratories

EQUIPMENT

WET BENCH FOR TMAH/KOH
	Chemical wet bench to fabricate high aspect ratio silicon structures. The systems allow the wet etching with alkaline solutions (KOH, TMAH) of samples single 4 inch wafer up to 25 silicon 4 inch wafers
DEEP REACTIVE ION ETCHING
	DEEP REACTIVE ION ETCHING ALCATEL A601E DEEP ETCHING OF SILICON AND SILICON OXIDE ANTI-NOTCHING SYSTEM DIFFERENT PROCESSES ARE AVAIABLE HIGH ETCH RATE PROCESS (UP TO 12 um/min) LOW ROUGHNESS PROCESS (UP TO 2 um/min) THROUGHT WAFER ETCHING DEEP SILICON OXIDE ETCHING UP TO 10 um Using deep reactive ion etching (DRIE), high aspect ratio trenches can be etched in silicon with near-vertical sidewalls. With an etch depth more than 500 µm, hole diameters of greater than 50 µm are feasible. This technology module is used, for example, in the manufacturing of silicon accelerometer, or gas crhomatographic coloumn
WAFER BONDER
	WAFER BONDER SB6 SuSS Microtec Anodic Bonding between Si and Pyrex wafers (up to 3). Parameters controlled during process are T, P, V, I, applied to the wafers and atmosphere pressure in chamber. Direct Bonding between Si wafers. Parameters controlled during process are T, P, applied to the wafers and atmosphere pressure in chamber. Very high planarity and contaminations free wafers are required. Post process annealing up to 1000°C is needed. SU8 Bonding between Si wafers (up to 4). Parameters controlled during process are T, P, applied to the wafers and atmosphere pressure in chamber. WAFER ALIGNER BA6 SuSS Microtec Alignment Si – Pyrex (through transparent wafers) Alignment Si – Si (through opaque wafers)
GLASS AND FUSED SILICA DEEP ETCHING
	Glass wafers are commonly used in micro-devices due to their excellent mechanical and optical properties. The wet etching of the glass wafer is widely used during the fabrication of micro-devices. Cr/Au hard mask is also a commonly used masking material due to the inert property of gold when in contact with concentrated HF (49%)