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Surname: 
Boldrini
Firstname: 
Virginia
Position: 
Temporary
Profile: 
Post-Doc
Phone: 
+39 051 639 9135
Activity: 
Design, fabrication and characterization of silicon carbide devices for power electronics. Study of the effect of post-implantation thermal annealing on the electrical activation of SiC layers, through four point probe Hall-effect measurements.
Curriculum: 

Virginia Boldrini graduated in Physics from University of Ferrara in 2014, with thesis about the fabrication of a gas sensor based on porous silicon substrate. Then she obtained a PhD in Physics from University of Padova, with thesis on the development and analysis of innovative doping processes for high purity germanium. During her PhD, Virginia was author and coauthor of five papers on academic journals and gave four oral presentations at international conferences. At present, she is a post-doc researcher at CNR-IMM, where she works on silicon carbide for power electronics. She is skilled in the fabrication of doped semiconductor layers, through conventional and non-conventional doping techniques, and in their characterization by several methods, particularly Hall-effect measurements.

Scientific Production

Virginia Boldrini, Antonella Parisini, Marco Pieruccini

Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 13-20

Maria Canino, Frank Torregrosa, Marcin Zielinski, Virginia Boldrini, Camilla Bidini, Manuela Russo, Piera Maccagnani, Francesco La Via

Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 1-6

Virginia Boldrini, Antonella Parisini, Marco Pieruccini

Analysis of the electrical activation data in thermally annealed implanted Al/4H–SiC systems: A novel approach based on cooperativity

Materials Science in Semiconductor Processing [Pergamon], Volume: 148 Pages: 106825

Roberta Nipoti, Virginia Boldrini, Mariaconcetta Canino, Fabrizio Tamarri, Salvatore Vantaggio, Antonella Parisini

Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 241-245

Roberta Nipoti, Antonella Parisini, Virginia Boldrini, Salvatore Vantaggio, Mariaconcetta Canino, Michele Sanmartin, Giovanni Alfieri

3× 1018-1× 1019 cm-3 Al+ ion implanted 4H-SiC: annealing time effect

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 683-688

Roberta Nipoti, Antonella Parisini, Virginia Boldrini, Salvatore Vantaggio, Marco Gorni, Mariaconcetta Canino, Giulio Pizzochero, Massimo Camarda, Judith Woerle, Ulrike Grossner

Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 698-704

Davide De Salvador, Francesco Sgarbossa, Gianluigi Maggioni, Enrico Napolitani, Chiara Carraro, Sara Maria Carturan, Walter Raniero, Stefano Bertoldo, Ruggero Milazzo, Virginia Boldrini, Gian Andrea Rizzi, Daniel Ricardo Napoli, Alberto Carnera

Advanced Diffusion Strategies for Junction Formation in Germanium

Multidisciplinary Digital Publishing Institute Proceedings [], Volume: 26 Issue: 1 Pages: 39

Virginia Boldrini, Gianluigi Maggioni, Sara Carturan, Walter Raniero, Francesco Sgarbossa, Ruggero Milazzo, Daniel Ricardo Napoli, Enrico Napolitani, R Camattari, D De Salvador

Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 52 Issue: 3 Pages: 035104

G Maggioni, S Carturan, W Raniero, S Riccetto, F Sgarbossa, V Boldrini, R Milazzo, DR Napoli, D Scarpa, A Andrighetto, E Napolitani, D De Salvador

Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

The European Physical Journal A [Springer Berlin Heidelberg], Volume: 54 Pages: 1-6

Gianluigi Maggioni, Francesco Sgarbossa, Enrico Napolitani, Walter Raniero, Virginia Boldrini, Sara Maria Carturan, Daniel Ricardo Napoli, Davide De Salvador

Diffusion doping of germanium by sputtered antimony sources

Materials Science in Semiconductor Processing [Pergamon], Volume: 75 Pages: 118-123

DR Napoli, G Maggioni, S Carturan, J Eberth, V Boldrini, D De Salvador, E Napolitani, P Cocconi, G Della Mea, M Gelain, R Gunnella, MG Grimaldi, M Loriggiola, G Mariotto, N Pinto, W Raniero, SJ Rezvani, S Riccetto, D Rosso, F Sgarbossa, S Tati

New Developments in HPGe Detectors for High Resolution Detection

Acta Physica Polonica B [], Volume: 48 Issue: 3 Pages: 387

Virginia Boldrini, Sara Maria Carturan, Gianluigi Maggioni, Enrico Napolitani, Daniel Ricardo Napoli, Riccardo Camattari, Davide De Salvador

Optimal process parameters for phosphorus spin-on-doping of germanium

Applied Surface Science [North-Holland], Volume: 392 Pages: 1173-1180

Barbara Fabbri, V Guidi, C Malagù, G Zonta, G Calabrese, S Gherardi, F Spizzo, Andrea Gaiardo, A Giberti, V Boldrini

Mesoporous silicon gas sensors: design, fabrication and conduction model

2015 XVIII AISEM Annual Conference [IEEE], Pages: 1-4

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