E Susi, A Poggi, R FABBR, M Merli

RTA-induced defects: a comparison between lamp and electron beam techniques

Science and Technology of Defects in Silicon [Elsevier], Volume: 4 Pages: 231-235

Sandro Mengali, Domenico Luciani, Roberto Viola, Nicola Liberatore, Stefano Zampolli, Ivan Elmi, Giancarlo Cardinali, Antonella Poggi, Enrico Dalcanale, Elisa Biavardi, Pierre Esseiva, Olivier Delemont, Federica Bonadio, Francesco Saverio Romolo

Toward street detection of amphetamines

SPIE Newsroom [Internet] [],

Sandro Mengali, Domenico Luciani, Roberto Viola, Nicola Liberatore, Stefano Zampolli, Ivan Elmi, Giancarlo Cardinali, Antonella Poggi, Enrico Dalcanale, Elisa Biavardi, Pierre Esseiva, Olivier Delemont, Federica Bonadio, Francesco Saverio Romolo

Toward street detection of ampphetamines

SPIE Newsroom [Internet] [],

A Nubile, A Poggi, E Cozzani, I Elmi, S Zampolli, M Messina, GC Cardinali, F Mancarella, M Belluce

A Novel Pneumatically Driven SU-8 Microvalve for High Speed Gas Chromatographic Applications

Proceedings NSTI-Nanotech [], Pages: 172-175

I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, LS Løvlie, BG Svensson

Analysis of electron traps at the 4 H–SiC/SiO 2 interface; influence by nitrogen implantation prior to wet oxidation

Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 2 Pages: 024503

A Poggi, F Moscatelli, S Solmi, A Armigliato, L Belsito, R Nipoti

Effect of nitrogen implantation at the SiO 2/SiC interface on the electron mobility and free carrier density in 4 H-SiC metal oxide semiconductor field effect transistor channel

Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 4 Pages: 044506

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Passivation by N Implantation of the SiO 2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

I PINTILIE, CM TEODORESCU, F MOSCATELLI, R NIPOT, A POGGI, S SOLMI, LS LØVLIE, BG SVENSSON

Analysis of electron traps at the 4H-SiC

Journal of applied physics [American Institute of Physics], Volume: 108 Issue: 2

Matteo Bosi, Bernard E Watts, Giovanni Attolini, Claudio Ferrari, Cesare Frigeri, Giancarlo Salviati, Antonella Poggi, Fulvio Mancarella, Alberto Roncaglia, Oscar Martínez, Vanesa Hortelano

Growth and characterization of 3C-SiC films for micro electro mechanical systems (MEMS) applications

Crystal growth & design [American Chemical Society], Volume: 9 Issue: 11 Pages: 4852-4859

Matteo Bosi, Giovanni Attolini, Bernard E Watts, Cesare Frigeri, Francesca Rossi, Antonella Poggi, Alberto Roncaglia, Fulvio Mancarella, Oscar Martinez, Vanesa Hortelano

Strain Evaluation in SiC MEMS Test Structures

ECS Transactions [IOP Publishing], Volume: 25 Issue: 8 Pages: 1031

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Investigation on the use of nitrogen implantation to improve the performance of n-channel enhancement 4H-SiC MOSFETs

IEEE transactions on electron devices [IEEE], Volume: 55 Issue: 8 Pages: 2021-2028

Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Roberta Nipoti

Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET

IEEE Transactions on Electron Devices [IEEE], Volume: 55 Issue: 4 Pages: 961-967

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 699

Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1027

Francesco Moscatelli, A Scorzoni, A Poggi, R Nipoti

Annealing effects on leakage current and epilayer doping concentration of p+ n junction 4H-SiC diodes after very high neutron irradiation

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 583 Issue: 1 Pages: 173-176

A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti

MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen

Microelectronic engineering [Elsevier], Volume: 84 Issue: 12 Pages: 2804-2809

M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, R Nipoti

Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574

A Poggi, F Moscatelli, Y Hijikata, S Solmi, M Sanmartin, F Tamarri, R Nipoti

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 639-642

F Moscatelli, A Scorzoni, A Poggi, M Passini, G Pizzocchero, R Nipoti

Chapter 5-SiC Devices-5.3 Bipolar Diodes-Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 917-920

Y Hijikata, S Yoshida, F Moscatelli, A Poggi, S Solmi, S Cristiani, R Nipoti

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 651-654

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions

IEEE transactions on nuclear science [IEEE], Volume: 53 Issue: 3 Pages: 1557-1563

A Poggi, F Bergamini, R Nipoti, S Solmi, M Canino, A Carnera

Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions

Applied physics letters [American Institute of Physics], Volume: 88 Issue: 16 Pages: 162106

Roberta Nipoti, Alberto Carnera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, Mara Passini

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911

A Moscatelli, F Poggi, A Marino, G Scorzoni, R Sanmartin, M Nipoti

Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 979-982

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

RADIATION DAMAGE EFFECTS-Radiation Hardness After Very High Neutron Irradiation of Minimum Ionizing Particle Detectors Based on 4H-SiC p+ n Junctions

IEEE Transactions on Nuclear Science [New York, NY: Professional Technical Group on Nuclear Science, c1963-], Volume: 53 Issue: 3 Pages: 1557-1563

F Scorzoni, A Moscatelli, A Bruzzi, M Poggi, S Sciortino, S Lagomarsino, G Nipoti, R Wagner

Part 2-Chapter 6-SiC Devices-6.4 Sensors and Detectors-Minimum Ionizing Particle Detector Based on p+ n Junction SiC Diode

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 1469-1472

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Roberta Nipoti

Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 546 Issue: 1-2 Pages: 218-221

A Poggi, A Parisini, R Nipoti, S Solmi

Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes

Applied Physics Letters [AIP Publishing], Volume: 86 Issue: 12

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Lagomarsino, S Mersi, S Sciortino, M Lazar, A Di Placido, R Nipoti

Chapter 6-SiC Devices-6.4 Sensors and Detectors-Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 1021-1024

F Bergamini, F Moscatelli, M Canino, A Poggi, R Nipoti

Chapter 5-SiC Technology-5.1 Doping and Implantation-Ar Annealing at 1600 (degree) C and 1650 (degree) C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 625-628

F Moscatelli, A Scorzoni, A Poggi, M Canino, R Nipoti

Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 737-740

M Canino, A Castaldini, A Cavallini, F Moscatelli, R Nipoti, A Poggi

Chapter 5-SiC Technology-5.1 Doping and Implantation-n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 649-652

A Poggi, A Parisini, S Solmi, R Nipoti

Chapter 5-SiC Technology-5.2 Dielectrics and Passivation Layers-Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 665-668