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Surname: 
Nipoti
Firstname: 
Roberta
Position: 
Staff
Profile: 
Senior Researcher
Phone: 
00 39 051 6399147
Curriculum: 

Roberta Nipoti took a MS in Solid State Physics “cum laudae” at the University of Bologna in 1979. She is employed as researcher at the Italian National Council of Research (CNR) since 1984. Her experience and expertise include the ion beam processing, the ion beam analysis, and the electrical characterizations of semiconductor materials for solid state electronics. Her present interest focus on Silicon Carbide for power electronics and for micro-opto-mechanical-systems

Scientific Production

Roberta Nipoti, Antonella Parisini

Al+ Ion Implanted 4H-SiC: Electrical Activation versus Annealing Time

Meeting Abstracts [The Electrochemical Society], Issue: 31 Pages: 1360-1360

Giovanna Sozzi, Maurizio Puzzanghera, Roberto Menozzi, Roberta Nipoti

The Role of Defects on Forward Current in 4H-SiC pin Diodes

IEEE Transactions on Electron Devices [IEEE],

Roberta Nipoti, Mariaconcetta Canino, Marcin Zielinski, Frank Torregrosa, Alberto Carnera

1300° C Annealing of 1× 1020 cm− 3 Al+ Ion Implanted 3C-SiC/Si

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 8 Issue: 9 Pages: P480-P487

Hussein M Ayedh, Marianne E Baathen, Augustinas Galeckas, Jawad Ul Hassan, JP Bergman, Roberta Nipoti, Anders Hallen, Bengt G Svensson

Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing

ECS Transactions [The Electrochemical Society], Volume: 86 Issue: 12 Pages: 91-97

Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Roberto Menozzi

Perimeter and Area Components in the IV Curves of 4H-SiC Vertical p⁺-in Diode With Al⁺ Ion-Implanted Emitters

IEEE Transactions on Electron Devices [IEEE], Volume: 65 Issue: 2 Pages: 629-635

Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Roberto Menozzi

Perimeter and Area Components in the – Curves of 4H-SiC Vertical p+-i-n Diode With Al+ Ion-Implanted Emitters

IEEE Transactions on Electron Devices [IEEE], Volume: 65 Issue: 2 Pages: 629-635

Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Roberto Menozzi

Perimeter and Area Components in the – Curves of 4H-SiC Vertical p+-i-n Diode With Al+ Ion-Implanted Emitters

IEEE Transactions on Electron Devices [IEEE], Volume: 65 Issue: 2 Pages: 629-635

Roberta Nipoti, Mariaconcetta Canino, Maurizio Puzzanghera, Giovanna Sozzi

Thermal Stability of 1× 1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature≥ 1850° C

ECS Transactions [The Electrochemical Society], Volume: 80 Issue: 7 Pages: 101-105

Roberta Nipoti, Maurizio Puzzanghera, Mariaconcetta Canino, Giovanna Sozzi

Ni-Al-Ti Ohmic Contacts on 1 x 1020 cm-3 Al+ Ion Implanted 4H-SiC

ECS Transactions [The Electrochemical Society], Volume: 80 Issue: 7 Pages: 117-122

HM Ayedh, R Nipoti, Anders Hallén, BG Svensson

Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect

Journal of Applied Physics [AIP Publishing], Volume: 122 Issue: 2 Pages: 025701

Giovanna Sozzi, Maurizio Puzzanghera, Giovanni Chiorboli, Roberta Nipoti

OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area

IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 6 Pages: 2572-2578

Antonella Parisini, Andrea Parisini, Roberta Nipoti

Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC

Journal of Physics: Condensed Matter [IOP Publishing], Volume: 29 Issue: 3 Pages: 035703

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

(Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950° C Temperature for Post Implantation Annealing

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 12 Pages: 171-181

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950° C Temperature for Post Implantation Annealing

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 12 Pages: 171-181

P Fedeli, M Gorni, A Carnera, A Parisini, G Alfieri, Ulrike Grossner, R Nipoti

1950° C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 5 Issue: 9 Pages: P534-P539

Roberta Nipoti, Giovanna Sozzi, Maurizio Puzzanghera, Roberto Menozzi

Al+ implanted vertical 4H-SiC pin diodes: experimental and simulated forward current-voltage characteristics

MRS Advances [Materials Research Society], Volume: 1 Issue: 54 Pages: 3637-3642

Roberta Nipoti, Antonella Parisini, Giovanna Sozzi, Maurizio Puzzanghera, Andrea Parisini, Alberto Carnera

Structural and Functional Characterizations of Al+ Implanted 4H-SiC Layers and Al+ Implanted 4H-SiC pn Junctions after 1950° C Post Implantation Annealing

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 5 Issue: 10 Pages: P621-P626

HM Ayedh, R Nipoti, Anders Hallén, BG Svensson

Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

Applied Physics Letters [AIP Publishing], Volume: 107 Issue: 25 Pages: 252102

A Parisini, M Gorni, A Nath, L Belsito, Mulpuri V Rao, R Nipoti

Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC

Journal of Applied Physics [AIP Publishing], Volume: 118 Issue: 3 Pages: 035101

Luigi Di Benedetto, Gian Domenico Licciardo, Salvatore Bellone, Roberta Nipoti

Analytical prediction of the cross-over point in the temperature coefficient of the forward characteristics of 4H-SiC p+-i-n diodes.

Materials Science Forum [],

A Nath, Mulpuri V Rao, Y-L Tian, A Parisini, R Nipoti

Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication

Journal of electronic materials [Springer US], Volume: 43 Issue: 4 Pages: 843-849

HM Ayedh, Viktor Bobal, R Nipoti, Anders Hallén, Bengt Gunnar Svensson

Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

Journal of Applied Physics [AIP], Volume: 115 Issue: 1 Pages: 012005

R Nipoti, M Puzzanghera, F Moscatelli

P+ implanted 6H-SiC n+-ip diodes: evidence for a post-implantation-annealing dependent defect activation

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1693

A Parisini, R Nipoti

Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation

Journal of Applied Physics [AIP], Volume: 114 Issue: 24 Pages: 243703

Luigi Di Benedetto, Gian Domenico Licciardo, Roberta Nipoti, Salvatore Bellone

On the crossing-point of 4H-SiC power diodes characteristics

IEEE Electron Device Letters [IEEE], Volume: 35 Issue: 2 Pages: 244-246

Luigi Di Benedetto, Gian Domenico Licciardo, Roberta Nipoti, Salvatore Bellone

On the crossing-point of 4H-SiC power diodes characteristics

IEEE Electron Device Letters [IEEE], Volume: 35 Issue: 2 Pages: 244-246

Nadeemullah A Mahadik, Anindya Nath, Eugene A Imhoff, Robert E Stahlbush, Roberta Nipoti

Basal Plane Dislocation Mitigation Using High Temperature Annealing in 4H-SiC Epitaxy

ECS Transactions [The Electrochemical Society], Volume: 58 Issue: 4 Pages: 325-329

Roberta Nipoti, Francesco Moscatelli, Pietro De Nicola

${\ rm Al}^{+} $ Implanted 4H-SiC ${\ rm p}^{+} $-in Diodes: Forward Current Negative Temperature Coefficient

IEEE Electron Device Letters [IEEE], Volume: 34 Issue: 8 Pages: 966-968

Roberta Nipoti, Luigi Di Benedetto, Cristiano Albonetti, Salvatore Bellone

Al+ implanted anode for 4H-SiC pin diodes

ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 3 Pages: 391-397

Roberta Nipoti, Raffaele Scaburri, Anders Hallén, Antonella Parisini

Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC

Journal of Materials Research [Cambridge University Press], Volume: 28 Issue: 1 Pages: 17-22

Roberta Nipoti

Ion Implanted 4H-SiC pin Diodes: Comparison between 1600-1650° C and 1950° C Post Implantation Annealing

Meeting Abstracts [The Electrochemical Society], Issue: 30 Pages: 2562-2562

R Nipoti, A Nath, F Moscatelli, P De Nicola, YL Tian, Mulpuri V Rao

Fully implanted vertical p–i–n diodes using high-purity semi-insulating 4H–SiC wafers

Semiconductor Science and Technology [IOP Publishing], Volume: 27 Issue: 5 Pages: 055005

R Nipoti, A Nath, SB Qadri, YL Tian, C Albonetti, A Carnera, Mulpuri V Rao

High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures≥ 1700° C

Journal of electronic materials [Springer US], Volume: 41 Issue: 3 Pages: 457-465

Roberta Nipoti, Anindya Nath, Mulpuri V Rao, Anders Hallén, Alberto Carnera, Yong-Lai Tian

Microwave annealing of very high dose aluminum-implanted 4H-SiC

Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 111301

Mulpuri V Rao, A Nath, SB Qadri, Y‐L Tian, R Nipoti

Microwave Annealing of Ion Implanted 4H‐SiC

AIP Conference Proceedings [AIP], Volume: 1321 Issue: 1 Pages: 241-244

Roberta Nipoti, Fulvio Mancarella, Francesco Moscatelli, Rita Rizzoli, S Zampolli, M Ferri

Carbon-cap for ohmic contacts on ion-implanted 4H–SiC

Electrochemical and Solid-State Letters [The Electrochemical Society], Volume: 13 Issue: 12 Pages: H432-H435

I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, LS Løvlie, BG Svensson

Analysis of electron traps at the 4 H–SiC/SiO 2 interface; influence by nitrogen implantation prior to wet oxidation

Journal of Applied Physics [AIP], Volume: 108 Issue: 2 Pages: 024503

A Poggi, F Moscatelli, S Solmi, A Armigliato, L Belsito, R Nipoti

Effect of nitrogen implantation at the SiO 2/SiC interface on the electron mobility and free carrier density in 4 H-SiC metal oxide semiconductor field effect transistor channel

Journal of Applied Physics [AIP], Volume: 107 Issue: 4 Pages: 044506

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Passivation by N Implantation of the SiO 2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1246

F Fabbri, D Natalini, A Cavallini, T Sekiguchi, R Nipoti, F Moscatelli

Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes

Superlattices and Microstructures [Academic Press], Volume: 45 Issue: 4-5 Pages: 383-387

Fortunato Pezzimenti, Francesco G Della Corte, Roberta Nipoti

Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour

Microelectronics Journal [Elsevier], Volume: 39 Issue: 12 Pages: 1594-1599

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti

Investigation on the use of nitrogen implantation to improve the performance of n-channel enhancement 4H-SiC MOSFETs

IEEE Transactions on Electron Devices [IEEE], Volume: 55 Issue: 8 Pages: 2021-2028

Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Roberta Nipoti

Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET

IEEE Transactions on Electron Devices [IEEE], Volume: 55 Issue: 4 Pages: 961-967

Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1027

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 699

Francesco Moscatelli, A Scorzoni, A Poggi, R Nipoti

Annealing effects on leakage current and epilayer doping concentration of p+ n junction 4H-SiC diodes after very high neutron irradiation

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 583 Issue: 1 Pages: 173-176

Francesco G Della Corte, Fortunato Pezzimenti, Roberta Nipoti

Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes

Microelectronics Journal [Elsevier], Volume: 38 Issue: 12 Pages: 1273-1279

A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti

MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen

Microelectronic Engineering [Elsevier], Volume: 84 Issue: 12 Pages: 2804-2809

Marc Avice, Ulrike Grossner, Ioana Pintilie, Bengt G Svensson, Marco Servidori, Roberta Nipoti, Ola Nilsen, Helmer Fjellvåg

Electrical properties of Al 2 O 3∕ 4 H‐Si C structures grown by atomic layer chemical vapor deposition

Journal of Applied Physics [AIP], Volume: 102 Issue: 5 Pages: 054513

F Moscatelli, A Scorzoni, A Poggi, M Passini, G Pizzocchero, R Nipoti

Chapter 5-SiC Devices-5.3 Bipolar Diodes-Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 917-920

David Menichelli, Monica Scaringella, Francesco Moscatelli, Mara Bruzzi, Roberta Nipoti

Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p+ n junctions

Diamond and related materials [Elsevier], Volume: 16 Issue: 1 Pages: 6-11

Y Hijikata, S Yoshida, F Moscatelli, A Poggi, S Solmi, S Cristiani, R Nipoti

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 651-654

M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, R Nipoti

Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574

A Poggi, F Moscatelli, Y Hijikata, S Solmi, M Sanmartin, F Tamarri, R Nipoti

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 639-642

U Grossner, M Servidori, M Avice, O Nilsen, H Fjellvag, R Nipoti, BG Svensson

Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 683-686

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions

IEEE transactions on nuclear science [IEEE], Volume: 53 Issue: 3 Pages: 1557-1563

A Poggi, F Bergamini, R Nipoti, S Solmi, M Canino, A Carnera

Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions

Applied physics letters [AIP], Volume: 88 Issue: 16 Pages: 162106

S Rao, F Bergamini, R Nipoti, SE Saddow

Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus

Applied surface science [North-Holland], Volume: 252 Issue: 10 Pages: 3837-3842

M Avice, U Grossner, I Pintilie, BG Svensson, M Servidori, R Nipoti

O. Nilsen and Fjellvag, H

Appl. Phys. Lett [], Volume: 89 Pages: 222103

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, I Mandic, R Nipoti

RADIATION DAMAGE EFFECTS-Radiation Hardness After Very High Neutron Irradiation of Minimum Ionizing Particle Detectors Based on 4H-SiC p+ n Junctions

IEEE Transactions on Nuclear Science [New York, NY: Professional Technical Group on Nuclear Science, c1963-], Volume: 53 Issue: 3 Pages: 1557-1563

A Moscatelli, F Poggi, A Marino, G Scorzoni, R Sanmartin, M Nipoti

Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 979-982

Roberta Nipoti, Alberto Carnera, Fabio Bergamini, Mariaconcetta Canino, Antonella Poggi, Sandro Solmi, Mara Passini

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 911

SP Bergamini, F Rao, R Hoff, AM Nipoti, E Saddow, SE Oborina

Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 527529 Pages: 839-842

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Roberta Nipoti

Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 546 Issue: 1-2 Pages: 218-221

A Poggi, A Parisini, R Nipoti, S Solmi

Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes

Applied Physics Letters [AIP], Volume: 86 Issue: 12 Pages: 121907

F Moscatelli, A Scorzoni, A Poggi, M Canino, R Nipoti

Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 737-740

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Lagomarsino, S Mersi, S Sciortino, M Lazar, A Di Placido, R Nipoti

Chapter 6-SiC Devices-6.4 Sensors and Detectors-Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 1021-1024

M Canino, A Castaldini, A Cavallini, F Moscatelli, R Nipoti, A Poggi

Chapter 5-SiC Technology-5.1 Doping and Implantation-n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 649-652

A Poggi, A Parisini, S Solmi, R Nipoti

Chapter 5-SiC Technology-5.2 Dielectrics and Passivation Layers-Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 665-668

F Bergamini, F Moscatelli, M Canino, A Poggi, R Nipoti

Chapter 5-SiC Technology-5.1 Doping and Implantation-Ar Annealing at 1600 (degree) C and 1650 (degree) C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 625-628

F Bergainini, SP Rao, SE Saddow, R Nipoti

Chapter 5-SiC Technology-5.1 Doping and Implantation-JV Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600 (degree) C

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 629-632

Roberta Nipoti, Maria Concetta Canino, Filippo Bonafè, Frank Torregrosa, Sylvain Monnoye, Hugues Mank, Marcin Zielinski

1300° C Annealing of 1× 1020 Al+ Ion Implanted 3C-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 420-423

Roberta Nipoti, Maria Concetta Canino, Sergio Sapienza, Michele Bellettato, Giovanna Sozzi, Giovanni Alfieri

Activation Energy for the Post Implantation Annealing of 1019 cm-3 and 1020 cm-3 Ion Implanted Al in 4H SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 416-419

Antonella Parisini, Roberta Nipoti

Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC (Al)

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 318-323

Roberta Nipoti, Maurizio Puzzanghera, Maria Concetta Canino, Giovanna Sozzi, Paolo Fedeli

Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10-4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 385-388

Massimo Zimbone, Nicolo Piluso, Grazia Litrico, Roberta Nipoti, Riccardo Reitano, Maria Concetta Canino, Maria Ausilia Di Stefano, Simona Lorenti, Francesco La Via

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 357-360

Hussein M Ayedh, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 233-236

Roberta Nipoti, Alberto Carnera, Giovanni Alfieri, Lukas Kranz

About the Electrical Activation of 1× 1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500-1950° C

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 333-338

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter J Wellmann, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 913-918

Roberta Nipoti, Maurizio Puzzanghera, Maria Concetta Canino, Giovanna Sozzi, Paolo Fedeli

Ni-Al-Ti Ohmic Contacts with Preserved form Factor and Few 10-4 Ωcm2 Specific Resistance on 0.1-1 Ωcm P-Type 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 385-388

P Fedeli, Maurizio Puzzanghera, Francesco Moscatelli, Renato Amaral Minamisawa, Giovanni Alfieri, Ulrike Grossner, Roberta Nipoti

Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 391-394

Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi

Al+ ion implanted 4H-SiC vertical p+-in diodes: Processing dependence of leakage currents and OCVD carrier lifetimes

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 439-442

Giovanni Alfieri, Andrei Mihaila, Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Phillippe Godignon, José Millán

Point defects investigation of high energy proton irradiated SiC p+-in diodes

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 246-249

Hussein M Ayedh, Naoya Iwamoto, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

Formation of D-center in p-type 4H-SiC epi-layers during high temperature treatments

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 262-265

Hussein M Ayedh, Maurizio Puzzanghera, Bengt Gunnar Svensson, Roberta Nipoti

DLTS study on Al+ ion implanted and 1950 C annealed pin 4H-SiC vertical diodes

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 279-282

Hussein M Ayedh, Maurizio Puzzanghera, Bengt Gunnar Svensson, Roberta Nipoti

DLTS study on Al+ ion implanted and 1950° C annealed pin 4H-SiC vertical diodes

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 279-282

Giovanni Alfieri, Andrei Mihaila, Roberta Nipoti, Maurizio Puzzanghera, Giovanna Sozzi, Phillippe Godignon, José Millán

Point defects investigation of high energy proton irradiated SiC p+-in diodes

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 246-249

HM Ayedh, N Iwamoto, R Nipoti, A Hallén, BG Svensson

Formation of D-center in p-type 4H-SiC epi-layers during high temperature treatments

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

R Nipoti, M Puzzanghera, G Sozzi

Al+ ion implanted 4H-SiC vertical p+-in diodes: Processing dependence of leakage currents and OCVD carrier lifetimes

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

P Fedeli, M Puzzanghera, F Moscatelli, RA Minamisawa, G Alfieri, U Grossner, R Nipoti

Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

Hussein M Ayedh, Viktor Bobal, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

Formation and Annihilation of Carbon Vacancies in 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 331-336

Roberta Nipoti, Antonella Parisini, Salvatore Vantaggio, Giovanni Alfieri, Alberto Carnera, Emanuele Centurioni, Elmi Ivan, Ulrike Grossner

1950° C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 523-526

Hussein M Ayedh, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 414-417

Antonella Parisini, Andrea Parisini, Marco Gorni, Roberta Nipoti

High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 283-286

Maurizio Puzzanghera, Roberta Nipoti

Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 773-776

S Rao, G Pangallo, FG Della Corte, R Nipoti

Temperature sensor based on 4H-SiC diodes for hostile environments

2015 XVIII AISEM Annual Conference [IEEE], Pages: 1-4

S Rao, G Pangallo, FG Della Corte, R Nipoti

Voltage doubler rectifier based on 4H-SiC diodes for high-temperatures energy harvesting applications

2015 XVIII AISEM Annual Conference [IEEE], Pages: 1-3

Antonella Parisini, Roberta Nipoti

About the hole transport analysis in heavy doped p-type 4H-SiC (Al)

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 416-419

Ulrike Grossner, Giovanni Alfieri, Roberta Nipoti

SiC device manufacturing: how processing impacts the material and device properties

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 381-386

Roberta Nipoti, Francesco Moscatelli, Alberto Roncaglia, Filippo Bonafè, Fulvio Mancarella, Pietro De Nicola, Anindya Nath, Mulpuri V Rao

Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 620-623

Alberto Roncaglia, Ruggero Anzalone, Luca Belsito, Fulvio Mancarella, Massimo Camarda, Nicolo’ Piluso, Roberta Nipoti, Francesco La Via

Hetero-Epitaxial Single Crystal 3C-SiC Opto-Mechanical Pressure Sensor

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 902-905

Luigi Di Benedetto, Gian Domenico Licciardo, Salvatore Bellone, Roberta Nipoti

Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H− SiC p+− i− n Diodes

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 628-631

Hussein M Ayedh, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 351-354

Roberta Nipoti, Antonella Parisini, Alberto Carnera, Cristiano Albonetti, Salvatore Vantaggio, Ulrike Grossner

Al+ Ion Implanted On-Axis< 0001> Semi-Insulating 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 399-402

A Nath, Mulpuri V Rao, F Moscatelli, M Puzzanghera, F Mancarella, R Nipoti

Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-in diodes

2014 20th International Conference on Ion Implantation Technology (IIT) [IEEE], Pages: 1-4

Nadeemullah A Mahadik, Robert E Stahlbush, Anindya Nath, Marko J Tadjer, Eugene A Imhoff, Boris N Feygelson, Roberta Nipoti

Post-growth reduction of basal plane dislocations by high temperature annealing in 4H-SiC epilayers

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 324-327

Anindya Nath, Antonella Parisini, Yong Lai Tian, Mulpuri V Rao, Roberta Nipoti

Microwave annealing of al+ implanted 4h-sic: Towards device fabrication

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 653-656

Ulrike Grossner, Francesco Moscatelli, Roberta Nipoti

Al+ implanted 4h-sic p+-in diodes: Evidence for post-implantation-Annealing dependent defect activation

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 657-660

Roberta Nipoti, Anders Hallén, Antonella Parisini, Francesco Moscatelli, Salvatore Vantaggio

Al+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 767-772

Fortunato Pezzimenti, Salvatore Bellone, Francesco Giuseppe Della Corte, Roberta Nipoti

Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 942-945

Roberta Nipoti, Anindya Nath, Yong Lai Tian, Fabrizio Tamarri, Francesco Moscatelli, Pietro de Nicola, Mulpuri V Rao

Fully Ion Implanted Vertical pin Diodes on High Purity Semi-Insulating 4H-SiC Wafers

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 985-988

Anindya Nath, Raffaele Scaburri, Mulpuri V Rao, Roberta Nipoti

Simulation of the temperature dependence of Hall carriers in Al doped 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 237-240

Roberta Nipoti, A Nath, Mulpuri V Rao, Anders Hallén, F Mancarella, S Zampolli, YL Tian

High dose Al+ implanted and microwave annealed 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 817-820

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S Løvlie, Bengt Gunnar Svensson

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 346-349

Roberta Nipoti, Fulvio Mancarella, Francesco Moscatelli, R Rizzoli, S Zampolli

Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 504-507

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S Løvlie, Bengt Gunnar Svensson

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 326-329

Raffaele Scaburri, Agostino Desalvo, Roberta Nipoti

Simulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free Carriers

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 397-400

Francesco Giuseppe Della Corte, Fortunato Pezzimenti, Salvatore Bellone, Roberta Nipoti

Numerical simulations of a 4H-SiC BMFET power transistor with normally-off characteristics

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 621-624

Giorgio Lulli, Roberta Nipoti

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 421-424

Roberta Nipoti, Anindya Nath, Stefano Cristiani, Michele Sanmartin, Mulpuri V Rao

Improving doping efficiency of P+ implanted ions in 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 393-396

Mulpuri V Rao, Yong Lai Tian, Syed B Qadri, Jaime A Freitas, Roberta Nipoti

Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 709-712

Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Roberta Nipoti, Aldo Armigliato, Luca Belsito

Nitridation of the SiO2/SiC interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 491-494

F Pezzimenti, FG Della Corte, R Nipoti

Numerical simulations of Al implanted 4H-SiC diodes modeling an explicit carrier trap effect due to the non-substitutional Al doping concentration

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting [IEEE], Pages: 210-213

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Bengt Gunnar Svensson

Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 533-536

Filippo Fabbri, Francesco Moscatelli, Antonella Poggi, Roberta Nipoti, Anna Cavallini

CV and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+ n 4H-SiC Diodes

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 469-472

Antonella Poggi, Francesco Moscatelli, Sandro Solmi, Roberta Nipoti, Fabrizio Tamarri, G Pizzochero

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 761-764

Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 1027-1030

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 699-702

Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Michele Sanmartin

Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 687-690

Ulrike Grossner, Marco Servidori, Marc Avice, Ola Nilsen, Helmer Fjellvåg, Roberta Nipoti, Bengt Gunnar Svensson

X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 683-686

Roberta Nipoti

Post-implantation annealing of SiC: relevance of the heating rate

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 561-566

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Passini, Giulio Pizzocchero, Roberta Nipoti

Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 917-920

Mariaconcetta Canino, Filippo Giannazzo, Fabrizio Roccaforte, Antonella Poggi, Sandro Solmi, Vito Raineri, Roberta Nipoti

Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 571-574

Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Roberta Nipoti

Fabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 651-654

Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti

Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 639-642

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Silvio Sciortino, Günter Wagner, Roberta Nipoti

Minimum Ionizing Particle Detector Based on p+ n Junction SiC Diode

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 1469-1472

Roberta Nipoti, Fabio Bergamini, Francesco Moscatelli, Antonella Poggi, Mariaconcetta Canino, Giuseppe Bertuccio

Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 815-818

Antonella Poggi, Francesco Moscatelli, Andrea Scorzoni, Giovanni Marino, Roberta Nipoti, Michele Sanmartin

Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and wet O2 oxidation ambient

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 979-982

Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi

Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 811-814

Shailaja P Rao, Fabio Bergamini, Roberta Nipoti, AM Hoff, E Oborina, Stephen E Saddow

Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 839-842

Fabio Bergamini, Shailaja P Rao, Antonella Poggi, Fabrizio Tamarri, Stephen E Saddow, Roberta Nipoti

Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor

Materials science forum [Trans Tech Publications], Volume: 527 Pages: 819-822

F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, G Wagner, R Nipoti

Radiation hardness of minimum ionizing particle detectors based on SiC p/sup+/n junctions

IEEE Nuclear Science Symposium Conference Record, 2005 [IEEE], Volume: 1 Pages: 490-494

Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi

n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 649-652

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Mihai Lazar, Annalisa Di Placido, Roberta Nipoti

Measurements of charge collection efficiency of p+/n junction SiC detectors

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 1021-1024

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mariaconcetta Canino, Roberta Nipoti

Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 737-740

Fabio Bergamini, Shailaja P Rao, Stephen E Saddow, Roberta Nipoti

JV Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600° C

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 629-632

Antonella Poggi, Andrea Parisini, Sandro Solmi, Roberta Nipoti

Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 665-668

Fabio Bergamini, Francesco Moscatelli, Mariaconcetta Canino, Antonella Poggi, Roberta Nipoti

Ar Annealing at 1600° C and 1650° C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing Temperature

Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 625-628

F MOSCATELLI, A SCORZONI, A POGGI, R NIPOTI, A DIPLACIDO, S LAGOMARSINO, M BRUZZI, STEFANO MERSI

PRELIMINARY MEASUREMENTS OF CHARGE COLLECTION OF P+/N JUNCTION SIC DETECTORS AND SIMULATIONS OF SCHOTTKY DIODES

Sensors And Microsystems [], Pages: 468-472